Growth and crystalline properties of Ge1−x−ySnxCy ternary alloy thin films on Ge(001) substrate

We achieved the world's first epitaxial growth of a Ge
_1-x-y
Sn
_x
C
_y
layer, and investigated the effect of Sn incorporation on the growth of Ge
_1-x
C
_x
. Sn incorporation can decrease the epitaxial temperature of Ge
_1-x
C
_x
layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge
_1-x-y
Sn
_x
C
_y
layer is expected to realize the energy band engineering independently on the lattice parameter and promises to extend the potential of group-IV semiconductor materials for nanoelectronics and optoelectronic applications.