High mobility germanium-tin (Ge0.930Sn0.070) P-MOSFETs with surface passivation by silicon atomic layer epitaxy

High quality Ge_0.930Sn_0.070 (100) film was epitaxially grown on Ge (100) substrate. A new passivation process is demonstrated and integrated in GeSn p-MOSFETs. Ge_0.930Sn_0.070 p-MOSFETs with the new low temperature Si₂H₆ passivation process achieved a high effective hole mobility of 500 cm^-2/V·s at N_inv of 7×10¹² cm^-.