Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge0.92Sn0.08-δ-Layers at the tunneling junction

We presented first results on the fabrication and characterization of vertical Ge heterojunction GAA-TFETs with a Ge
_0.92
Sn
_0.08
-δ-layer at the tunneling junction with transistor body diameters from 10 μm down to 250 nm (pillar geometry).