Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation

We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si
2
H
6
passivation module. High performance Ge
0.96
Sn
0.04
pMOSFETs were fabricated. At a Q
mv
of 6×10
¹²
cm
⁻²
, a 24% enhancement in μ
eff
is demonstrated in Ge
0.96
Sn
0.04
pMOSFETs compared to Ge control.