Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension

Both threshold voltage and transconductance shifting of cap Si and SiGe are consistent with the tendency of the W/L ratio. However, the variation of this critical ratio for the enhancement or degradation in p-channel at different cut areas implies the importance of process stability. The piezoresistance coefficients of [110] strained SiGe elucidates the enhancement or degradation of both p-/n-channels.