Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor

In this work, we use ballistic quantum transport in a III-nitride to realize room temperature negative differential resistance (NDR) in a GaN-based Tunneling Hot Electron Transistor. The results showed reproducible double-sweep characteristics, with peak-to-valley ratio (PVCR) of 7.2 and peak current density (PCD) about 143 A/cm
²
. This is the first report of repeatable room temperature negative differential resistance in a III-nitride device.