Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide

Molybdenum disulfide (MoS
2
) has recently received significant attention because of its interesting thickness-dependent properties and its potential as a semiconducting substitute to graphene [1,2]. Most of the studies so far have focused on small (< 100 microns) exfoliated MoS
2
flakes [1-3]. For manufacturable electronics, it is essential to have large-area material that is compatible with standard fabrication processes for high yield and reproducibility. Though significant progress has been achieved using chemical vapor deposition (CVD) [4,5], the formation of high-quality wafer-scale MoS
2
of controlled thickness is still a challenge.