Study on low-loss gate drive circuit for high efficiency server power supply using normally-off SiC-JFET

We investigated how to reduce the energy loss of server power supplies equipped with vertical-trench normally-off Silicon Carbide junction-gate field-effect transistors (SiC-JFETs). High-speed driving circuits consisting of a speed-up capacitor with separated source terminal and timing adjust circuits to ensure a dead time margin are proposed. Applying the developed normally-off SiC-JFETs and the proposed gate driver to PFC circuits and DC/AC circuits resulted in, an increase of server power supply efficiency to 95.10%.