High performance raised source/drain thin film transistor with field plate design

In this paper, we propose a high-performance raised source/drain polycrystalline thin film transistor with a field plate structure (FPRSD-TFT) design. The FP structure induces the change of current path to reduce the impact-ionization to improve the kink effect. This is because the current path is far away from the high electric field region. Therefore, the electric field of FPRSD can be reduced by the RSD design. Besides, the kink effect and the leakage current are simultaneously improved. Moreover, the ON/OFF current ratio of the FPRSD-TFT is also higher than that of the conventional TFT.