2D Maxwell/transport time domain modeling of THz GaN distributed transferred electron device

In order to investigate the distributed semiconductor device high frequency operation, we are developing a 2D/3D time-domain electromagnetic physical simulator. It is based on a self-consistent solution of both the Maxwell equations and the free carrier macroscopic conservation equation sets issued from the Boltzmann general transport equation. Its large potential application field presently concerns the GaN THz distributed Transferred Electron Device (TED).