Fast aging degradation rate prediction during production test

A flow to predict a wafer/die's speed degradation rate without burn-in using ATE tests is presented in this paper. The proposed flow is digital with less than 1µs measurement time per die, allowing it be applied to high volume production test. The accuracy of the proposed flow has been verified by silicon data collected from 5 Freescale
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wafers from different production lots. With the proposed flow, the volume of devices requiring burn-in is reduced.