Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests

We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts are examined and mechanisms are discussed. A comparison with NAND Flash memories, with both multi-level and single-level cell architecture, is performed. In addition to prompt effects, retention of irradiated cells is analyzed for several months after irradiation. Thanks to tail distributions, we can assess possible rare events.