L-band Lamb mode resonators in Gallium Nitride MMIC technology

We present a theoretical and experimental study of L-band (1–2 GHz) Lamb mode resonators in Gallium Nitride (GaN) monolithic microwave IC technology. These resonators leverage Au-free metallization and optimized anchors, enabling f·Q products up to 5.5×10
¹²
, the highest reported in GaN resonators to date. These devices also demonstrate the highest electromechanical coupling (keff
²
of 0.39%) measured in GaN resonators using an interdigitated transducer in the absence of a bottom electrode. Achieving such high values of f·Q and keff
²
, these GaN MEMS resonators can enable channel select filters for wireless communications, with wide bandwidth tuning capabilities (0.18–0.8 MHz) at 1–2 GHz range.