1.2kV class SiC MOSFETs with improved performance over wide operating temperature

In this paper, we report on 1.2kV SiC MOSFETs rated to T
j, max
=200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at T
j
=25°C and 47mOhm/103mOhms at T
j
=150°C are shown for 0.1cm
²
and 0.2cm
²
die. 1000 hour High-Temperature Gate-Bias (HTGB) tests at T
j
=200°C show excellent threshold stability with less than 5% parametric shift observed. High-Temperature Reverse Bias (HTRB) at T
j
=200°C/V
DS
=960V also show stable and reliable operation. Single-pulse avalanche energies of over E
Av
=1.75J are obtained with 0.1cm
²
MOSFETs.