Controllability of switching speed and loss for SiC JFET/Si MOSFET cascode with external gate resistor

The SiC JFET/Si MOSFET cascode is an attractive alternative to conventional Si MOSFETs or IGBTs due to its low on-resistance and good switching performance. However, dv/dt control without increased switching loss is difficult when using a conventional gate resistor or capacitor for the MOSFET. In this paper, a dv/dt and switching loss control method that ensures a good switching performance for the cascode with an external gate resistor for JFET, as well as for MOSFET, is presented.