1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding

A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400°C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically stable and transparent junction was achieved. The static and dynamic performance with and without back-side gate control are presented and compared.