Physical characterization of electron trapping in Unibond(R) oxides

In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps.