A 112–134 GHz SiGe amplifier with peak output power of 120 mW

A fully-integrated 8-way power combining amplifier for 120 GHz application in an advanced 90 nm SiGe HBT technology is presented. The single-ended PA breakout has a small-signal gain of 20 dB and P
_sat
of 12.5-13.8 dBm at 114 to 130 GHz. The 8-way power combining PA achieves a small-signal gain of 15 dB and peak P
_sat
of 20-20.8 dBm at 114-126 GHz with a PAE of 7.6-6.3 %. To our knowledge, this is the highest power silicon-based D-band amplifier to-date.