Effectiveness Analysis of a Non-Destructive Single Event Burnout Test Methodology

It is essential to characterize power MosFETs regarding their tolerance to destructive Single Event Burnouts (SEB). Therefore, several non-destructive test methods have been developed to evaluate the SEB cross-section of power devices. A power MosFET has been evaluated using a test circuit, designed according to standard non-destructive test methods discussed in the literature. Guidelines suggest a prior adaptation of auxiliary components to the device sensitivity before the radiation test. With the first value chosen for the de-coupling capacitor, the external component initiated destructive events and affected the evaluation of the cross-section. As a result, the influence of auxiliary components on the device cross-section was studied. This paper presents the obtained experimental results, supported by SPICE simulations, to evaluate and discuss how the circuit effectiveness depends on the external components.