Analysis of multilevel capability of a filamentary resistive memory cell

The linear relation between the on-resistance and compliance current in all resistive filamentary memory devices is valid over more than six orders of magnitude of resistance and current values for a multitude of various devices. The multilevel memory storage capability of a resistive cell relies on this remarkable relation characterized by a single constant K. In this work we show that the constant K is related to a minimum SET voltage and is independent of the conduction mechanisms and of the materials of the cell.