2nd generation bilayer graphene transistors for applications in nanoelectronics

In this paper we report on in-situ CCVD grown bilayer graphene transistors (BiLGFETs) in a Silicon-CMOS compatible fabrication process. By means of catalytic chemical vapor deposition (CCVD) the BiLGFETs are realized directly on oxidized silicon substrate without transfer. These BiLGFETs possess unipolar p-type device characteristics with a high on/off-current ratio between 1×10
⁵
and 1×10
⁷
at room temperature [1, 2]. At this stage, the maximal on-state current of a BiLGFET is clearly influenced by the contact resistance. In order to improve the performance of the produced BiLGFETs, an advanced fabrication step has been developed, by which means the contact resistance is lowered by a factor of 10.