A 0.1–1.2 GHz CMOS ultra-broadband power amplifier

A 0.1-1.2 GHz power amplifier using 0.18-μm CMOS technology is presented with a small chip area. With 3.3V supply, the measurement results in this band indicated that the gain is better than 20 dB, the S11 and S22 is less than - 18 dB and -10 dB, respectively. The saturated output power is 20.5 dBm and 19.5 dBm at 433 MHz and 900 MHz with the corresponding PAE of 27% and 19.5%, respectively. The chip area is only 0.414 mm
²
.