A 0.3 THz 4 × 4 cold-FET imaging array in 45 nm CMOS SOI

This paper presents a high performance THz imaging array using advanced CMOS technology. The single element of the 0.3 THz 4×4 45 nm CMOS imaging array is composed of a high-efficiency differential on-chip antenna meeting all metal-density rules, which is coupled to a differential detector and a low noise CMOS IF amplifier. The array results in an NEP of 100 pW/Hz
^1/2
, a responsivity of 1.8-2.0 kV/W with a 3-dB bandwidth of 20 GHz. The power consumption is 3.6 mW/pixel. These values are competitive with the best CMOS THz imaging arrays to date.