High performance transmit/receive modules in 0.13 µm SiGe:C BiCMOS for short range F-band MIMO radars

Transmit and Receive (TX/RX) F-band radar modules are presented. Both modules are implemented in a state of the art SiGe:C BiCMOS featuring high-speed HBTs with f
_T
/f
_max
of 300/500 GHz. The TX is based on a frequency octupler that consists of a cascade of three Gilbert cells, covering the upper F-band from 120-140 GHz and providing differential output power of up to 6 dBm, the highest values reported to date for BiCMOS. The RX uses the identical frequency octupler followed by a mixer, transformer and a differential LNA, giving altogether conversion gain of 25 dB. Both chips are packaged and connected to off-chip patch antennas using bondwire interconnects with dedicated compensation structures. Initial measurement trials proved full functionality of the realized frontend across 114-152 GHz. It has also been demonstrated that wire-bonding, when properly designed, is still an attractive solution for chip to antenna interconnects even above 110 GHz.