Dopant deactivation and reactivation study of advanced doping technologies

Electrical-assisted diffusion of carriers had been proposed as a new hypothesis of a major dopant deactivation kinetics. New metrology methods, including SIMS/ARXPS and CAOT/DHE methods, are used for this study and supply supporting evidences and data. N-type (P- and As-based) implants show more serious deactivation, but similar reactivation to P-type (B-based) implants, which can be interpreted by the electrical-assisted diffusion mechanism. In this paper, dopant deactivation and reactivation of advanced doping techniques including both n-type doping by As beam-line (BL) implant and p-type doping by molecular BF
₂
BL implant and B
₂
H
₆
plasma doping (PLAD) are studied and demonstrated.