Comparison of channel length extracted from gate capacitance with that extracted from channel resistance

The two effective channel lengths L
_CAP1
and L
_CAP2
which are extracted from the gate capacitances with and without the fringe component, are compared with the effective channel length extracted from channel resistance L
_CEF
. It is found that L
_CAP1
is about 30 nm longer than L
_CAP2
and almost coincides with L
_CEF
for the samples made with 65-nm technology. It is considered that this difference is caused by the extension regions next to source and drain regions.