Analytical solutions for breakdown voltage and electrical characteristics of STI DEMOS transistors

A CMOS compatible high-voltage STI DEMOS transistor is fabricated and its electrical characteristics studied. A method is used to find the breakdown voltage of this two-dimensional STI DEMOS structure theoretically. A breakdown voltage model, which relates the breakdown voltage to the effective N well doping concentration N
B
and the width of the accumulation region χ
a
, is derived. The predictions of this model agree very well with both the experimental data and with the TCAD simulations.