Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering

In this study, the Ni-Cr-Si material of thin film resistor on Al
₂
O
₃
substrate using DC and RF magnetron sputtering techniques are compared. It can be seen that the difference of crystalline structure with various sputtering methods can be observed using X-ray diffraction spectra pattern. The uniform large grain size with low resistance can be obtained by using a high annealing temperature of 450°C. In addition, a stable near-zero temperature coefficient of resistance (8 ppm /°C) can be attained by using RF sputtering with annealing temperature at 400°C.