Electrical quality of 28nm HK/MG MOSFETs with PDA and DPN treatment

On the basis of tested data, the performance of NMOSFETs with PDA treatment in drive current, S.S. values and channel mobility is superior to that with DPN treatment. Comparing two nitridation treatment processes at the same annealing temperature, it seems that PDA proving the hydrogen to fix the dangling bond on the channel surface is more beneficial for device performance before the reliability test. Furthermore, the capability in healing of oxygen vacancy of gate dielectric is little better than that with DPN, illustrating in lower gate leakage, especially as the channel length is narrowed down.