Electro-thermal method for semiconductor power losses analysis under different modulation schemes

This paper presents methods for determining power loss profiles of Si-IGBT-based H-bridge inverters in motor drives. A comparison of inverter losses with commonly used PWM schemes including Bipolar and Unipolar PWMs is presented. Power losses were decomposed into switching and conduction losses to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by an electro-thermal model and the dynamic power loss is determined based on the time-domain voltage, current and junction temperature using pre-calibrated look-up table.