Low temperature a-SiGe:H Near-IR sensor and photovoltaic devices for flexible multi-functional panel

High Near-IR response photo-diode (0.1A/W@800nm) and high efficiency a-Si/a-SiGe tandem solar cell (8.38%) were demonstrated using high-density plasma fabricated a-SiGe:H deposition technology with Si
₂
H
₆
and GeH
₄
precursor. The low temperature (140
^°
C) a-SiGe:H films with low defect density (2.3×10
¹⁶
cm
^-3
)are suitable for the applications of flexible solar self-powered multi-functional panel and 3D stacked monolithic devices.