Electrical parametric and reliability of 5×50um TSVs for 3D IC

We present electrical parametric and reliability of 5×50um through silicon vias (TSVs) for three dimensional integrated circuits (3D IC). Electrical parameters such as oxide breakdown voltage (V
_bd
^TSV
), leakage current (I
_leak
^TSV
), oxide capacitance (C
_ox
^TSV
), dielectric constant (k), minimum capacitance (C
_min
^TSV
), threshold voltage (V
_th
) and mobile oxide charges (Q
_m
) of blind TSVs are analyzed. And, the reliability of TSVs is analyzed with thermal cycling between -55°C to 125°C with a dwell time of 10-15 minutes by following JEDEC standard No. 22-A104D.