The pn Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping

Boron and phosphorous layers were deposited by ultrahigh-vacuum chemical vapor deposition at 450 °C using B
₂
H
₆
and PH
₃
, respectively, to form the abrupt doping profiles in epitaxial Ge on Si substrate. The diffusion process without ion implantation damage is demonstrated by the nearly ideal diode characteristics for the first time. The Ge diodes doped by the boron layer and the phosphorous layer have the ON/OFF ratio of
\(\sim 1\times 10^{5}\)
and
\(\sim 1.5\times 10^{5}\)
with the extremely low reverse current densities of
\(\sim 1\times 10^{-4}\)
A/cm
\(^{2}\)
and
\(\sim 4\,\times \,10^{-5}\)
A/cm
\(^{2}\)
, respectively. The good crystalline quality at junction free from implantation damage by
in situ
solid phase doping reflects these figures of merit.