Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling

A compact model for dual-gate carbon nanotube FETs (dual-gate CNTFETs) is presented. This compact model includes the most significant mechanisms present in dual-gate CNTFETs such as the Schottky barrier at the metallic-nanotube interface, the band-to-band tunneling effect, and quasi-ballistic transport through the Landauer equation. An innovative logic circuit using the dual-gate CNTFET model is presented. Finally, the logic cell operation is analyzed while taking into account some of the CNT technological dispersions.