A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors

Silicon p/sup +/n junctions irradiated with neutron and proton fluences in the range 5/spl times/10/sup 11/-4/spl times/10/sup 15/ cm/sup -2/ and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N/sub t/ of the main radiation-induced deep traps (E/sub t//spl ap/0.44-0.54 eV) is found to increase as N/sub t/ /spl alpha/ f achieving values up to 5/spl times/10/sup 15/ cm/sup -3/ and a mobility saturation at 100 cm/sup 2//Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk, and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested.