A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25 °C to 500 °C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3 dB bandwidth increases from 270 kHz at 25 °C to 410 kHz at 500 °C. The opamp achieves 1.46 V/ \(\mu \) s slew rate and 0.25% total harmonic distortion. This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits.