Evaluation of FET performance and restrictions by low-frequency measurements

In this paper a characterization technique for the evaluation of transistor performance and restrictions is presented, based on a simple and low-cost measurement system. Experimental examples, carried out on a 0.5 × 1000 μm
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GaN HEMT, are reported. The validity of the proposed approach is demonstrated by comparing the results with the ones obtained by means of commonly adopted measurement setups.