Two-dimensional modeling of an ultra-thin body single-gate Si Tunnel-FET

In the last few years the Tunnel-FET has become a promising device to be the successor of the classical MOSFET due to its steep switching behavior with subthreshold slopes (S) below 60 mV/dec. However, due to trap-assisted-tunneling (TAT) at the channel junctions the slope is significantly influenced. In this paper a 2D analytical band-to-band current model for ultra-thin body (UTB) single-gate (SG) Tunnel-FETs is presented. The model includes a solution for the trap-assisted-tunneling (TAT) current. The model results are compared against TCAD Sentaurus simulations and device measurement data.