Novel operation scheme and technological optimization for 1T bulk capacitor-less DRAM

A high performance bulk floating body memory device is demonstrated in this work. Experimental results show a data retention of 1.89s and a initial memory window over 60μA@85°C, which are excellent features for eDRAM application. A novel read method based on parasitic BJT effect is introduced to improve device performance. The impact of process parameters is investigated and P well doping is found to be the key factor. The scaling potential of the proposed read scheme is also evaluated by the measurement of devices with several (W/L, T
_ox
) combinations.