Effect of boron doping on optical and electrical properties of p-type a-Si∶H films for thin film solar cells application

We report the effect of boron doping on optical and electrical properties of p-type a-Si∶H films. The p-type a-Si∶H thin films have been deposited by RF-PECVD system varying the diborane flow rate from 5 sccm to 9 sccm. Enhancement in deposition rate from 30.3 nm/min to 33.6 nm reported with increasing diborane gas flow rate. Change in band gap, refractive index and Urbach energy with varying doping level is studied. An increase in dark conductivity is reported with increasing boron concentration. Solar cells fabricated with 4.63% efficiency.