A case study of low-noise amplifier design for 2.65GHz wireless system using MOSFET BSIM4 series and CNTFET

Low power LNA design for high frequency wireless application is one of the challenging tasks in present scenario of VLSI. The major components of noise in amplifier are incorporated into flicker noise and thermal noise. In this paper the main concentration is given on a comparative study for a single ended LNA in the platform of 130nm to 22nm models of BSIM4 series and Verilog based CNTFET. Nose figure, reflection coefficients and gain of LNA are taken as a subject of matter for the comparison.