A practical method for extracting impurity profiles and effective mobilities of MOSFET's with nonuniform channel doping

Complete profiling of channel impurity concentration up to the surface is presented using Gaussians whose parameters are determined, giving optimum fits to the measured capacitance voltage (C-V) profiles. A rectangular capacitor with a large aspect ratio is found to be effective in reducing series resistance for accurate (C-V) measurements at high frequencies. Effective mobilities are extracted from practical MOSFETs based on numerical analysis of the field effects using the obtained profiles and compared to those for uniform doping.<
>