A study on performance degradation of SiC MOSFET for burn-in test of body diode

The defect expansion in pn junction of SiC device due to current conduction degrades device performance. The long duration dc current conduction and free-wheeling in switching operation of body diode may have an impact on the conduction and blocking capability of SiC MOSFET. This paper experimentally evaluates the deterioration of SiC MOSFETs for long term dc current conduction of body diode and free-wheeling current conduction of body diode in switching operation of MOSFET. The test result reveals that the multiplication of on resistance and the increment of leakage current in blocking condition are found stemming from body diode conduction for some SiC MOSFETs.