Simulation study of I-V characteristics of RTD with variation in Doping concentration

In this paper we present the effect on I-V characteristics of GaAs/AlGaAs Resonant Tunneling Diode (RTD) as a function of doping concentration. This simulation study may be utilized to improve the performance of RTD at high frequencies. Furthermore, these characteristics provide a comparative relation with other parameters like barrier length and spacer layer. Simulation performed using Nextnano3 and Atlas tools confirm the various characteristics presented in this work.