Abstract:
In this paper we present the effect on I-V characteristics of GaAs/AlGaAs Resonant Tunneling Diode (RTD) as a function of doping concentration. This simulation study may ...Show MoreNotes: PDF Not Yet Available In IEEE Xplore. The document that should appear here is not currently available. IEEE Xplore is working to obtain a replacement PDF. That PDF will be posted as soon as it is available. We regret any inconvenience in the meantime.
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Abstract:
In this paper we present the effect on I-V characteristics of GaAs/AlGaAs Resonant Tunneling Diode (RTD) as a function of doping concentration. This simulation study may be utilized to improve the performance of RTD at high frequencies. Furthermore, these characteristics provide a comparative relation with other parameters like barrier length and spacer layer. Simulation performed using Nextnano3 and Atlas tools confirm the various characteristics presented in this work.
Notes: PDF Not Yet Available In IEEE Xplore. The document that should appear here is not currently available. IEEE Xplore is working to obtain a replacement PDF. That PDF will be posted as soon as it is available. We regret any inconvenience in the meantime.
Published in: IMPACT-2013
Date of Conference: 23-25 November 2013
Date Added to IEEE Xplore: 22 May 2014
ISBN Information:
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