An ultra low noise amplifier at X band

The design and development of a low noise amplifier that exhibits sub dB noise figures at X band, using a commercially available pHEMT process is presented here. Novelties in our design include the use of stabilizing networks that don't employ resistors and the use of transmission line based inductors that provide a higher Q alternative to spirals. These techniques serve to minimize the lowest achievable noise figure while allowing unconditional stability, a pre-requisite in commercial, monolithic LNAs. The designed low noise amplifier works from 9 to 11 GHz with roughly 30 decibels of gain over the band and sub decibel noise figures.