The nature of high-temperature instability in fully depleted SOI IM n-MOSFETs

A high-temperature drain current "jump" in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in SIMOX SOI MOSFETs at temperatures above 200/spl deg/C. After a negative voltage has been applied to the substrate. A direct link of the current "jump" with the positive charge formation in the buried oxide (BOX) is demonstrated. The current jump, called "front channel high-temperature kink-effect" is explained by the compensation of positive charges in the (BOX), near the BOX-silicon film interface, by electrons.