SiC-on-insulator interface stability crystallographical aspects

To investigate heterojunction stability, an interface model based on the molecular dynamics formalism was used. The resulting variant of conjugation was found to fit the interface energy minimum. An algorithm of optimal orientation selection to predict the stability of a given type of conjugation is proposed. The model is applied to study conjugation in the system SiC-AlN-Al/sub 2/O/sub 3/.