Loading [MathJax]/extensions/MathMenu.js
19.2 A 93.4mm2 64Gb MLC NAND-flash memory with 16nm CMOS technology | IEEE Conference Publication | IEEE Xplore

19.2 A 93.4mm2 64Gb MLC NAND-flash memory with 16nm CMOS technology


Abstract:

The demand for high-density low-cost NAND-Flash memory devices is growing due to the increase in the NAND-Flash application market such as SSD for tablet PCs and ultra-bo...Show More

Abstract:

The demand for high-density low-cost NAND-Flash memory devices is growing due to the increase in the NAND-Flash application market such as SSD for tablet PCs and ultra-books as well as conventional mobile applications such as USB drives and digital still cameras. Various approaches to implement high-density NAND Flash with small area have been introduced to address the market. Moving from a single-level cell (SLC) to 2 bits per cell (MLC) or to 3 bits per cell is one of the approaches to increasing memory density with the same die area. Lithographic shrinking with conventional 2D technology is the most mature technology although 3D stacking technologies [1] are being developed.
Date of Conference: 09-13 February 2014
Date Added to IEEE Xplore: 06 March 2014
ISBN Information:

ISSN Information:

Conference Location: San Francisco, CA, USA

Contact IEEE to Subscribe

References

References is not available for this document.