Abstract:
The demand for high-density low-cost NAND-Flash memory devices is growing due to the increase in the NAND-Flash application market such as SSD for tablet PCs and ultra-bo...Show MoreMetadata
Abstract:
The demand for high-density low-cost NAND-Flash memory devices is growing due to the increase in the NAND-Flash application market such as SSD for tablet PCs and ultra-books as well as conventional mobile applications such as USB drives and digital still cameras. Various approaches to implement high-density NAND Flash with small area have been introduced to address the market. Moving from a single-level cell (SLC) to 2 bits per cell (MLC) or to 3 bits per cell is one of the approaches to increasing memory density with the same die area. Lithographic shrinking with conventional 2D technology is the most mature technology although 3D stacking technologies [1] are being developed.
Published in: 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
Date of Conference: 09-13 February 2014
Date Added to IEEE Xplore: 06 March 2014
ISBN Information: