Forming a regular domain structures at 127° Y′-cut of a LiTaO3 crystal by using direct e-beam writing

Regular domain structures were formed at the 127° Y'-cut of a LiTaO
₃
crystal by direct e-beam writing. The study of regular domain structures was carried out by selective chemical etching method and by nonlinear optics methods. The domain lines consists of single triangular domains merged together (base-to-apex). The domain distribution inside the LiTaO
₃
127° Y'-cut occurs at the angle 37° to the irradiated surface and exhibits a distinct anisotropy in the crystallographic directions. Depending on the direction of e-beam movement along the irradiated surface, the threshold density of the introduced charge necessary for the inversion of the crystal spontaneous polarization changes by an order of magnitude.