High fluence irradiations on triple junction solar cells

Triple junction GaInP/InGaAs/Ge solar cells were irradiated with 3 MeV protons to extreme fluences as high as 10
¹⁵
p
⁺
/cm
²
. In this paper, IV and QE results will be presented and a model will be developed to explain the radiation behavior. A carrier removal damage mechanism is evident which actually aids in the radiation hardness of these devices.